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GT50J322 Datasheet, Toshiba Semiconductor

GT50J322 igbt equivalent, silicon n-channel igbt.

GT50J322 Avg. rating / M : 1.0 rating-17

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GT50J322 Datasheet

Application

Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC.

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GT50J322 Page 1 GT50J322 Page 2 GT50J322 Page 3

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